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Bipolar resistive switching memory behaviors of the micro-size composite particles 期刊论文
COMPOSITE STRUCTURES, 2017, 卷号: 166, 页码: 177-183
Authors:  Zhou, Guangdong;  Sun, Bai;  Liu, Xiaoqing;  Wu, Bo;  Zhang, Shuangju;  Zhou, Ankun
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Resistive Switching Memory  Silicates Composite Particles  Visible Light-controlled  
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 753-759
Authors:  Zhou,Guangdong;  Xiao,Lihua;  Zhang,Shuangju;  Wu,Bo;  Liu,Xiaoqin;  Zhou,Ankun
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Electric-field  Devices  Bipolar  Films  Heterostructures  Transition  Behaviors  Filament  Matrix  Cells  Bilay Niox/tio2 Films  Resistive Switching Memory  Migration Of Oxygen Vacancy  Ag Conduction Filamens  
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
Authors:  Zhou, Guangdong;  Wu, Bo;  Liu, Xiaoqin;  Li, Ping;  Zhang, Shuangju;  Sun, Bai;  Zhou, Ankun
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Resistance switching characteristics of coreeshell gamma-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 678, 页码: 31-35
Authors:  Zhou,Guangdong;  Wu,Bo;  Liu,Xiaoqin;  Li,Zhiling;  Zhang,Shuangju;  Zhou,Ankun;  Yang,Xiude
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