Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix

doi:10.1039/c5cp07650a

	Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
	Zhou, Guangdong 1,2; Wu, Bo 3; Liu, Xiaoqin 1; Li, Ping 3; Zhang, Shuangju 1; Sun, Bai 1; Zhou, Ankun 4
	2016-03-07
发表期刊	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷号	18 期号:9 页码:6509-6514
摘要	A two-bit memory and quantized storage phenomenon are observed at room temperature for a device based on the traditional MOS structure with double-stacked Pt-nanocrystals (Pt-NCs). A 2.68 and 1.72 V flat band voltage shift (memory window) has been obtained when applying a +/- 7 V programming/erasing voltage to the structures with double-stacked Pt-NCs. The memory windows of 2.40 and 1.44 V can be retained after stress for 10(5) seconds, which correspond to 89.55% and 83.72% stored charges reserved. The quantized charge storage phenomenon characterized by current-voltage (J-V) hysteresis curves was detected at room temperature. The shrinkage of the memory window results from the decreasing tunneling probability, which strongly depends on the number of stacks. The traps, de-traps and quantum confinement effects of Pt-NCs may contribute to the improvement of dielectric characteristics and the two-bit memory behavior. The multi-bit memory and quantized storage behavior observed in the Pt-NCs stacks structure at room temperature might provide a feasible method for realizing the multi-bit storage in non-volatile flash memory devices.
DOI	10.1039/c5cp07650a
收录类别	SCI
语种	英语
WOS记录号	WOS:000371139400016
引用统计
文献类型	期刊论文
条目标识符	http://ir.kib.ac.cn/handle/151853/25988
专题	植物化学与西部植物资源持续利用国家重点实验室
作者单位	1.Southwest Univ, ICEAM, Chongqing 400715, Peoples R China 2.Guizhou Inst Technol, Guiyang 550003, Peoples R China 3.Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China 4.Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guangdong,Wu, Bo,Liu, Xiaoqin,et al. Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(9):6509-6514.
APA	Zhou, Guangdong.,Wu, Bo.,Liu, Xiaoqin.,Li, Ping.,Zhang, Shuangju.,...&Zhou, Ankun.(2016).Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(9),6509-6514.
MLA	Zhou, Guangdong,et al."Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.9(2016):6509-6514.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
c5cp07650a1.pdf（550KB）			开放获取	CC BY-NC-SA	浏览下载