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Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 753-759
作者:  Zhou,Guangdong;  Xiao,Lihua;  Zhang,Shuangju;  Wu,Bo;  Liu,Xiaoqin;  Zhou,Ankun
浏览  |  Adobe PDF(2208Kb)  |  收藏  |  浏览/下载：134/62  |  提交时间：2017/10/23
Electric-field  Devices  Bipolar  Films  Heterostructures  Transition  Behaviors  Filament  Matrix  Cells  Bilay Niox/tio2 Films  Resistive Switching Memory  Migration Of Oxygen Vacancy  Ag Conduction Filamens  
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:  Zhou, Guangdong;  Wu, Bo;  Liu, Xiaoqin;  Li, Ping;  Zhang, Shuangju;  Sun, Bai;  Zhou, Ankun
浏览  |  Adobe PDF(550Kb)  |  收藏  |  浏览/下载：108/29  |  提交时间：2016/06/27
Resistance switching characteristics of coreeshell gamma-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 678, 页码: 31-35
作者:  Zhou,Guangdong;  Wu,Bo;  Liu,Xiaoqin;  Li,Zhiling;  Zhang,Shuangju;  Zhou,Ankun;  Yang,Xiude
浏览  |  Adobe PDF(1915Kb)  |  收藏  |  浏览/下载：124/32  |  提交时间：2017/07/11