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题名: Bipolar resistive switching memory behaviors of the micro-size composite particles
作者: Zhou, Guangdong1, 2, 3; Sun, Bai4; Liu, Xiaoqing1; Wu, Bo5; Zhang, Shuangju1; Zhou, Ankun6
刊名: COMPOSITE STRUCTURES
关键词: Resistive switching memory ; Silicates composite particles ; Visible light-controlled
英文摘要: Composite particles (CPs) with an average diameter of 100 gm, containing the amorphous silicates, but crystal structures are dominated by the NaS2, Al2S3, Al0.55Mo2S4 and MoO3, are synthesized using hydrothermal method. Bipolar resistive switching (RS) memory behaviors with favorable resistance ON/OFF ratio, high retention and voltage cycling endurance performance are observed in the CPs-based device. The RS memory behaviors can be well controlled by stressing visible light at room temperature. The traps/deep traps based physical modes are proposed to interpret the RS memory behaviors for the quasi-bulk silicate-based composites. Different from conventional nano-scale RS memory device, the discovery of the RS memory behavior of micro-scale silicate composites may provide one new insight into the mechanism of resistive switching behavior. (C) 2017 Published by Elsevier Ltd.
出版日期: 2017-04-15
卷号: 166, 页码:177-183
语种: 英语
收录类别: SCI
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.kib.ac.cn/handle/151853/51055
Appears in Collections:中国科学院东亚植物多样性与生物地理学重点实验室_期刊论文

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作者单位: 1.Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China
2.Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China
3.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
4.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
5.Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China
6.Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China

Recommended Citation:
Zhou, Guangdong,Sun, Bai,Liu, Xiaoqing,et al. Bipolar resistive switching memory behaviors of the micro-size composite particles[J]. COMPOSITE STRUCTURES,2017,166:177-183.
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