Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

doi:10.1016/j.jallcom.2017.06.178

	Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
	Zhou,Guangdong; Xiao,Lihua; Zhang,Shuangju; Wu,Bo; Liu,Xiaoqin; Zhou,Ankun
	2017
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	722 页码:753-759
摘要	Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of similar to 10(3), switching cycle endurance for 10(2) and long retention time for 10(4) s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. (C) 2017 Published by Elsevier B.V.
关键词	Electric-field Devices Bipolar Films Heterostructures Transition Behaviors Filament Matrix Cells Bilay Niox/tio2 Films Resistive Switching Memory Migration Of Oxygen Vacancy Ag Conduction Filamens
学科领域	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
DOI	10.1016/j.jallcom.2017.06.178
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.kib.ac.cn/handle/151853/54868
专题	植物化学与西部植物资源持续利用国家重点实验室
推荐引用方式 GB/T 7714	Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,et al. Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,722:753-759.
APA	Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,Wu,Bo,Liu,Xiaoqin,&Zhou,Ankun.(2017).Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory.JOURNAL OF ALLOYS AND COMPOUNDS,722,753-759.
MLA	Zhou,Guangdong,et al."Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory".JOURNAL OF ALLOYS AND COMPOUNDS 722(2017):753-759.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
105.pdf（2208KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载