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Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 14, 页码: 1
作者:  Zhou, Guangdong;  Sun, Bai;  Yao, Yanqing;  Zhang, Huihui;  Zhou, Ankun;  Alameh, Kamal;  Ding, Baofu;  Song, Qunliang
浏览  |  Adobe PDF(1247Kb)  |  收藏  |  浏览/下载：131/49  |  提交时间：2017/02/14
Enhancing Prefrontal Neuron Activity Enables Associative Learning of Temporally Disparate Events 期刊论文
CELL REPORTS, 2016, 卷号: 15, 期号: 11, 页码: 2400-2410
作者:  Volle, Julien;  Yu, Xiaotian;  Sun, Huaying;  Tanninen, Stephanie E.;  Insel, Nathan;  Takehara-Nishiuchi, Kaori
Adobe PDF(3515Kb)  |  收藏  |  浏览/下载：111/38  |  提交时间：2016/08/22
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:  Zhou, Guangdong;  Wu, Bo;  Liu, Xiaoqin;  Li, Ping;  Zhang, Shuangju;  Sun, Bai;  Zhou, Ankun
Adobe PDF(550Kb)  |  收藏  |  浏览/下载：133/38  |  提交时间：2016/06/27