Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

doi:10.1063/1.4962655

	Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
	Zhou, Guangdong 1; Sun, Bai 1,2; Yao, Yanqing 1; Zhang, Huihui 1; Zhou, Ankun 3,4; Alameh, Kamal 5; Ding, Baofu 1,5; Song, Qunliang 1,5,6
	2016-10-03
发表期刊	APPLIED PHYSICS LETTERS
卷号	109 期号:14 页码:1
摘要	MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of similar to 240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of similar to 10(2) for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. Published by AIP Publishing.
DOI	10.1063/1.4962655
收录类别	SCI
语种	英语
WOS记录号	WOS:000386152800074
引用统计
文献类型	期刊论文
条目标识符	http://ir.kib.ac.cn/handle/151853/33757
专题	植物化学与西部植物资源持续利用国家重点实验室
作者单位	1.Southwest Univ, Inst Clean Energy & Adv Mat ICEAM, Chongqing 400715, Peoples R China 2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong 999077, Hong Kong, Peoples R China 3.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Peoples R China 4.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China 5.Edith Cowan Univ, Electron Sci Res Inst, 270 Joondalup Dr, Joondalup, WA 6027, Australia 6.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guangdong,Sun, Bai,Yao, Yanqing,et al. Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires[J]. APPLIED PHYSICS LETTERS,2016,109(14):1.
APA	Zhou, Guangdong.,Sun, Bai.,Yao, Yanqing.,Zhang, Huihui.,Zhou, Ankun.,...&Song, Qunliang.(2016).Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires.APPLIED PHYSICS LETTERS,109(14),1.
MLA	Zhou, Guangdong,et al."Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires".APPLIED PHYSICS LETTERS 109.14(2016):1.

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