Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

doi:10.1063/1.5089147

	Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
	Zhou, Guangdong 1,2; Yang, Xiude 2; Xiao, Lihua 1; Sun, Bai 3; Zhou, Ankun 4,5
通讯作者	Zhou, Guangdong(zhougd@swu.edu.cn) ; Sun, Bai(bsun@swjtu.edu.cn)
	2019-04-22
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	114 期号:16 页码:5
摘要	A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. Published under license by AIP Publishing.
DOI	10.1063/1.5089147
收录类别	SCI
语种	英语
WOS记录号	WOS:000466264600042
引用统计
文献类型	期刊论文
条目标识符	http://ir.kib.ac.cn/handle/151853/66861
专题	植物化学与西部植物资源持续利用国家重点实验室
通讯作者	Zhou, Guangdong; Sun, Bai
作者单位	1.Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China 3.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China 4.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Yunnan, Peoples R China 5.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,et al. Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory[J]. APPLIED PHYSICS LETTERS,2019,114(16):5.
APA	Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,Sun, Bai,&Zhou, Ankun.(2019).Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory.APPLIED PHYSICS LETTERS,114(16),5.
MLA	Zhou, Guangdong,et al."Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory".APPLIED PHYSICS LETTERS 114.16(2019):5.

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