A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
Zhou, Guangdong1,2,3; Sun, Bai2,3,4; Zhou, Ankun5; Wu, Bo6; Huang, Haishen6
2017-02-01
发表期刊CURRENT APPLIED PHYSICS
卷号17期号:2页码:235-239
摘要Resistive random access memory (RRAM) devices have emerged as promising candidates for near future nonvolatile information storage. Eggshells, a food waste, have not been focused and recycled sustainably today. Eggshell-based devices have shown a large resistive-switching(RS) memory behaviors with favorable resistance ratio of similar to 10(3), larger memory window of similar to 3.5 V, and high endurance and retention performance. Redox-based Ag filament models involving the formation and rupture of the metallic conduction filaments between top and bottom electrodes are proposed to interpret the large nonvolatile bipolar RS memory behaviors. This discovery provides for the possibility of an environmentally friendly, low-cost and sustainable material application in the next-generation nonvolatile date storage device. (C) 2016 Elsevier B.V. All rights reserved.
关键词Resistive Switching Memory Eggshell Dielectric Films Redox-based Filaments
DOI10.1016/j.cap.2016.09.018
收录类别SCI
语种英语
WOS记录号WOS:000393245500020
引用统计
被引频次:36[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.kib.ac.cn/handle/151853/41902
专题植物化学与西部植物资源持续利用国家重点实验室
作者单位1.Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China
2.Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
3.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
4.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
5.Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China
6.Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Guangdong,Sun, Bai,Zhou, Ankun,et al. A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells[J]. CURRENT APPLIED PHYSICS,2017,17(2):235-239.
APA Zhou, Guangdong,Sun, Bai,Zhou, Ankun,Wu, Bo,&Huang, Haishen.(2017).A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells.CURRENT APPLIED PHYSICS,17(2),235-239.
MLA Zhou, Guangdong,et al."A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells".CURRENT APPLIED PHYSICS 17.2(2017):235-239.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
zhou2016.pdf(1259KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zhou, Guangdong]的文章
[Sun, Bai]的文章
[Zhou, Ankun]的文章
百度学术
百度学术中相似的文章
[Zhou, Guangdong]的文章
[Sun, Bai]的文章
[Zhou, Ankun]的文章
必应学术
必应学术中相似的文章
[Zhou, Guangdong]的文章
[Sun, Bai]的文章
[Zhou, Ankun]的文章
相关权益政策
暂无数据
收藏/分享
文件名: zhou2016.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。