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Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 753-759
Authors:  Zhou,Guangdong;  Xiao,Lihua;  Zhang,Shuangju;  Wu,Bo;  Liu,Xiaoqin;  Zhou,Ankun
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Electric-field  Devices  Bipolar  Films  Heterostructures  Transition  Behaviors  Filament  Matrix  Cells  Bilay Niox/tio2 Films  Resistive Switching Memory  Migration Of Oxygen Vacancy  Ag Conduction Filamens