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Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 14, 页码: 1
Authors:  Zhou, Guangdong;  Sun, Bai;  Yao, Yanqing;  Zhang, Huihui;  Zhou, Ankun;  Alameh, Kamal;  Ding, Baofu;  Song, Qunliang
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